Few-quintuple Bi2Te3 nanofilms as potential thermoelectric materials

نویسندگان

  • Gang Zhou
  • Dong Wang
چکیده

The thermoelectric transport properties of p-type Bi₂Te₃ nanofilms with various quintuple layers (QL) were systematically investigated based on ab initio electronic structure calculations and Boltzmann transport equations. Our results demonstrated that p-type few-quintuple Bi₂Te₃ nanofilms could exhibit high thermoelectric performance. It was found out that the 1QL Bi₂Te₃ nanofilm had the highest ZT value as compared with other nanofilms, which is mainly attributed to the significant enhancement of the density of states near the edge of the valence band resulting from the strong coupling between the top and bottom electronic states and the quantum confinement effect. The dependence of the thermoelectric transport properties on carrier concentration and temperature was also discussed in detail, which can be useful for searching high-efficiency few-quintuple Bi₂Te₃ thermoelectric nanofilms.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials

Bismuth telluride (Bi2Te3) and related compounds have recently attracted strong interest, owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these materials are particularly interesting from the physics point of view. We report results of the micro-Raman spectroscopy study of the “graphene-like” exfoliated few-q...

متن کامل

Observing the Interplay Between Composition and Phonon Transport in Bi2Te3-xSex Alloys using ADF STEM

Bismuth telluride-selenide alloys are some of the most commonly used thermoelectrics at room temperature. In these materials, phonon scattering plays a pivotal role in controlling the thermoelectric properties where decoupling phonons and charge carriers induces a net heat flux that results in an electric potential. Understanding the heat flow requires knowledge of phonon scattering behavior as...

متن کامل

Spin - orbit interaction effect in the electronic struc - ture of Bi 2 Te 3 observed by angle - resolved photoe - mission spectroscopy

The electronic structure of p-type doped Bi2Te3 is studied by angle resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the Γ-Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understan...

متن کامل

Solution synthesis of telluride-based nano-barbell structures coated with PEDOT:PSS for spray-printed thermoelectric generators.

UNLABELLED Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded PEDOT PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid...

متن کامل

Preferential Scattering by Interfacial Charged Defects for Enhanced Thermoelectric Performance in Few-layered n-type Bi2Te3

Over the past two decades several nano-structuring methods have helped improve the figure of merit (ZT) in the state-of-the art bulk thermoelectric materials. While these methods could enhance the thermoelectric performance of p-type Bi2Te3, it was frustrating to researchers that they proved ineffective for n-type Bi2Te3 due to the inevitable deterioration of its thermoelectric properties in th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015